Dimitrov, Ventzislav Ivanov2015-01-152015-01-152004-11Dimitrov, V. I. (2004). A model of AlN layer formation during ion nitriding of al. Applied Physics A: Materials Science and Processing, 79(7), 1829-1832. doi:10.1007/s00339-003-2253-y0947-8396https://hdl.handle.net/11729/143http://dx.doi.org/10.1007/s00339-003-2253-yA diffusion model of AlN layer formation by ion nitriding of Al is proposed based on the analysis of atomic transport during the process. This model is reduced to the following. Implantation of N ions to the surface of the specimen, named the reaction zone; extraction of Al from the substrate; diffusion transport of Al to the reaction zone through an AlN layer formed during the process; formation and growth of AlN in the reaction zone; sputtering of the AlN layer. Equations controlling the growth process have been obtained.eninfo:eu-repo/semantics/closedAccessPlasma-diffusion treatmentSurface modificationAluminumTransportMetalsAtomic physicsCorrosion resistanceDiffusionFluxesInterfaces (materials)IonsMathematical modelsSurface phenomenaSurfacesAction zonesIon nitridingSurface modificationsVacancy-fixed ionsAluminum compoundsArticle79718291832Q2WOS:0002234640000362-s2.0-554424060610.1007/s00339-003-2253-yQ2