A new high performance CMOS active inductor
dc.authorid | 0000-0002-2950-7986 | |
dc.authorid | 0000-0001-8870-1642 | |
dc.authorid | 0000-0002-6706-7352 | |
dc.authorid | 0000-0003-0391-9576 | |
dc.contributor.author | Momen, Hadi Ghasemzadeh | en_US |
dc.contributor.author | Yazgı, Metin | en_US |
dc.contributor.author | Köprü, Ramazan | en_US |
dc.contributor.author | Saatlo, Ali Naderi | en_US |
dc.date.accessioned | 2017-03-13T08:44:49Z | |
dc.date.available | 2017-03-13T08:44:49Z | |
dc.date.issued | 2016 | |
dc.department | Işık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü | en_US |
dc.department | Işık University, Faculty of Engineering, Department of Electrical-Electronics Engineering | en_US |
dc.description.abstract | A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply. | en_US |
dc.description.version | Publisher's Version | en_US |
dc.identifier.citation | Momen, H. G., Yazgı, M., Köprü, R. & Saatlo, A. N. (2016). A new high performance CMOS active inductor. Paper presented at the 2016 39th International Conference on Telecommunications and Signal Processing (TSP), 291-294. doi:10.1109/TSP.2016.7760881 | en_US |
dc.identifier.doi | 10.1109/TSP.2016.7760881 | |
dc.identifier.endpage | 294 | |
dc.identifier.isbn | 9781509012886 | |
dc.identifier.isbn | 9781509012879 | |
dc.identifier.isbn | 9781509012893 | |
dc.identifier.scopus | 2-s2.0-85006761368 | |
dc.identifier.scopusquality | N/A | |
dc.identifier.startpage | 291 | |
dc.identifier.uri | https://hdl.handle.net/11729/1188 | |
dc.identifier.uri | http://dx.doi.org/10.1109/TSP.2016.7760881 | |
dc.identifier.wos | WOS:000390164000062 | |
dc.identifier.wosquality | N/A | |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.indekslendigikaynak | Conference Proceedings Citation Index – Science (CPCI-S) | en_US |
dc.institutionauthor | Köprü, Ramazan | en_US |
dc.institutionauthorid | 0000-0002-6706-7352 | |
dc.language.iso | en | en_US |
dc.peerreviewed | Yes | en_US |
dc.publicationstatus | Published | en_US |
dc.publisher | IEEE | en_US |
dc.relation.ispartof | 2016 39th International Conference on Telecommunications and Signal Processing (TSP) | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | CMOS | en_US |
dc.subject | Active inductor | en_US |
dc.subject | Cascoding | en_US |
dc.subject | RC feedback | en_US |
dc.subject | Parasitic components | en_US |
dc.subject | CMOS integrated circuits | en_US |
dc.subject | Inductors | en_US |
dc.subject | Integrated circuit layout | en_US |
dc.subject | Integrated circuit modelling | en_US |
dc.subject | MMIC | en_US |
dc.subject | Monte Carlo methods | en_US |
dc.subject | Q-factor | en_US |
dc.subject | RC circuits | en_US |
dc.subject | Thermal analysis | en_US |
dc.subject | Transistor circuits | en_US |
dc.subject | CMOS active inductor | en_US |
dc.subject | Self-resonance frequency | en_US |
dc.subject | Quality factor | en_US |
dc.subject | Cascoding configuration | en_US |
dc.subject | Input transistor topology | en_US |
dc.subject | Schematic simulation | en_US |
dc.subject | Post-layout simulation | en_US |
dc.subject | Monte Carlo analysis | en_US |
dc.subject | Temperature analysis | en_US |
dc.subject | PVT variation | en_US |
dc.subject | Inductive behavior frequency range | en_US |
dc.subject | Power consumption | en_US |
dc.subject | Frequency 0.3 GHz to 11.4 GHz | en_US |
dc.subject | Voltage 1.8 V | en_US |
dc.title | A new high performance CMOS active inductor | en_US |
dc.type | Conference Object | en_US |
dspace.entity.type | Publication |