A new high performance CMOS active inductor

dc.authorid0000-0002-2950-7986
dc.authorid0000-0001-8870-1642
dc.authorid0000-0002-6706-7352
dc.authorid0000-0003-0391-9576
dc.contributor.authorMomen, Hadi Ghasemzadehen_US
dc.contributor.authorYazgı, Metinen_US
dc.contributor.authorKöprü, Ramazanen_US
dc.contributor.authorSaatlo, Ali Naderien_US
dc.date.accessioned2017-03-13T08:44:49Z
dc.date.available2017-03-13T08:44:49Z
dc.date.issued2016
dc.departmentIşık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.departmentIşık University, Faculty of Engineering, Department of Electrical-Electronics Engineeringen_US
dc.description.abstractA new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.en_US
dc.description.versionPublisher's Versionen_US
dc.identifier.citationMomen, H. G., Yazgı, M., Köprü, R. & Saatlo, A. N. (2016). A new high performance CMOS active inductor. Paper presented at the 2016 39th International Conference on Telecommunications and Signal Processing (TSP), 291-294. doi:10.1109/TSP.2016.7760881en_US
dc.identifier.doi10.1109/TSP.2016.7760881
dc.identifier.endpage294
dc.identifier.isbn9781509012886
dc.identifier.isbn9781509012879
dc.identifier.isbn9781509012893
dc.identifier.scopus2-s2.0-85006761368
dc.identifier.scopusqualityN/A
dc.identifier.startpage291
dc.identifier.urihttps://hdl.handle.net/11729/1188
dc.identifier.urihttp://dx.doi.org/10.1109/TSP.2016.7760881
dc.identifier.wosWOS:000390164000062
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakConference Proceedings Citation Index – Science (CPCI-S)en_US
dc.institutionauthorKöprü, Ramazanen_US
dc.institutionauthorid0000-0002-6706-7352
dc.language.isoenen_US
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.publisherIEEEen_US
dc.relation.ispartof2016 39th International Conference on Telecommunications and Signal Processing (TSP)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCMOSen_US
dc.subjectActive inductoren_US
dc.subjectCascodingen_US
dc.subjectRC feedbacken_US
dc.subjectParasitic componentsen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectInductorsen_US
dc.subjectIntegrated circuit layouten_US
dc.subjectIntegrated circuit modellingen_US
dc.subjectMMICen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectQ-factoren_US
dc.subjectRC circuitsen_US
dc.subjectThermal analysisen_US
dc.subjectTransistor circuitsen_US
dc.subjectCMOS active inductoren_US
dc.subjectSelf-resonance frequencyen_US
dc.subjectQuality factoren_US
dc.subjectCascoding configurationen_US
dc.subjectInput transistor topologyen_US
dc.subjectSchematic simulationen_US
dc.subjectPost-layout simulationen_US
dc.subjectMonte Carlo analysisen_US
dc.subjectTemperature analysisen_US
dc.subjectPVT variationen_US
dc.subjectInductive behavior frequency rangeen_US
dc.subjectPower consumptionen_US
dc.subjectFrequency 0.3 GHz to 11.4 GHzen_US
dc.subjectVoltage 1.8 Ven_US
dc.titleA new high performance CMOS active inductoren_US
dc.typeConference Objecten_US
dspace.entity.typePublication

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