2W wideband microwave PA design for 824-2170 MHz band using normalized gain function method
Yükleniyor...
Dosyalar
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IEEE
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, we present the design of a 2W linear wideband microwave PA (power amplifier) targeted to operate in 824-2170 MHz mobile frequency range covering GSM850, EGSM, DCS, PCS and WCDMA. The design is basically based on the NGF (Normalized Gain Function) method which is very recently introduced into the literature. NGF is defined as the ratio of T and |S-21|(2), i.e. T-NGF= T/|S-21|(2), shape of the gain function of the amplifier to be designed and the shape of the transistor forward gain function, respectively. Synthesis of input/output matching networks (IMN/OMN) of the amplifier requires target gain functions, which are mathematically generated in terms of TNGF. The particular transistor used in the design is FP31QF, a 2W HFET from TriQuint Semiconductor. Theoretical PA performance obtained in Matlab is shown to be in a very high agreement with the simulated performance in MWO (Microwave Office) of AWR Inc.
Açıklama
Anahtar Kelimeler
Real frequency technique, Matlab, Microwave amplifiers, Microwave circuits, Microwave transistors, Transistors, Wideband, AWR Inc, DCS, EGSM, FP31QF, GSM850, HFET, Microwave Office, PCS, TriQuint Semiconductor, WCDMA, Frequency 824 MHz to 2170 MHz, Input/output matching networks, Linear wideband microwave power amplifier design, Mobile frequency range, Normalized gain function method, Power 2 W, Transistor forward gain function, UHF power amplifiers, Mathematics computing, Microwave power amplifiers
Kaynak
2013 8th International Conference on Electrical and Electronics Engineering (ELECO)
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
Sayı
Künye
Köprü, R., Kuntman, H. & Yarman, B. S. B. (2013). 2W wideband microwave PA design for 824-2170 MHz band using normalized gain function method. Paper presented at the 2013 8th International Conference on Electrical and Electronics Engineering (ELECO), 344-348. doi:10.1109/ELECO.2013.6713858
