Transmission increase upon switching of VO2 thin films on microstructured surfaces
Yükleniyor...
Dosyalar
Tarih
2007-08-27
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The authors compare transmission measurements of near-infrared light through VO2 thin films on smooth substrates and on ordered arrays of silica microspheres. When the samples are heated above the critical temperature for the semiconductor-metallic phase transition, smooth thin films show reduced transmission independent of thickness; however, the VO2 film deposited on the microspheres may show either reduced or enhanced transmission, depending on VO2 film thickness. They show that this at a first glance, unexpected behavior is directly related to the change of scattering efficiency upon the phase transition. This suggests that optical transmission through thin-film microstructures could be tuned by an appropriate combination of microsphere ordering and VO2 film thickness.
Açıklama
Two of the authors (I.K. and R.F.H.) gratefully acknowledge the support of the Alexander von Humboldt Foundation through Research Fellowship and Senior Scientist Award, respectively. Vanadium dioxide research at Vanderbilt was supported by the National Science Foundation through a Nanoscience Interdisciplinary Research Team Grant No. (DMR-0210785) and a Major Research Instrumentation Grant No. (DMR-9871234).
Anahtar Kelimeler
Colloid monolayers, Insulator transition, Lithography, Metal phase-transition, Nanoparticles, Semiconductor, Film thickness, Light transmission, Microspheres, Microstructure, Phase transitions, Silica, Microstructured surfaces, Scattering efficiency, Silica microspheres, Transmission measurements, Thin films
Kaynak
Applied Physics Letters
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
91
Sayı
9
Künye
Karakurt, İ., Boneberg, J., Leiderer, P., Lopez, R., Halabica, A. & Haglund, R. F. (2007). Transmission increase upon switching of VO2 thin films on microstructured surfaces. Applied Physics Letters, 91(9), 1-4. doi:10.1063/1.2776368
