Designing a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductor

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dc.authorid0000-0002-2950-7986
dc.authorid0000-0001-8870-1642
dc.authorid0000-0002-6706-7352
dc.contributor.authorMomen, Hadi Ghasemzadehen_US
dc.contributor.authorYazgı, Metinen_US
dc.contributor.authorKöprü, Ramazanen_US
dc.date.accessioned2016-08-11T16:29:27Z
dc.date.available2016-08-11T16:29:27Z
dc.date.issued2015
dc.departmentIşık University, Faculty of Engineering, Department of Electrical-Electronics Engineeringen_US
dc.departmentIşık Üniversitesi, Mühendislik Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.description.abstractA new Tunable Floating Active Inductor (TFAI) based on modified Tunable Grounded Active Inductor (TGAI) is proposed. Multi regulated cascade stage is used in TGAI to boost gain of input impedance and inductor value thus the Q factor enhancement obtained. The arrangement of Multi-Regulated Cascade (MRC) stage is caused the input transistor which determines AI self-resonance frequency to be as small as possible and it is free of body effect which is crucial in sub-micron technology. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This TFAI was designed using the AMS 0.18 um RF CMOS process, which demonstrates an adjustable quality factor of 10?567 with a 6?284 nH inductance. The Q factor and value of active inductor is adjusted with bias current and flexible capacitance (varactor), respectively. The self-resonance frequency for both grounded and floating AI is about 6.2 GHz. The proposed active inductor also shows wide dynamic range and higher quality factor compared to conventional floating active inductor circuits.en_US
dc.description.versionPublisher's Versionen_US
dc.identifier.citationMomen, H. G., Yazgı, M. & Köprü, R. (2015). Designing a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductor. Paper presented at the 2015 9th International Conference on Electrical and Electronics Engineering (ELECO) 110-114. doi:10.1109/ELECO.2015.7394542en_US
dc.identifier.doi10.1109/ELECO.2015.7394542
dc.identifier.endpage114
dc.identifier.isbn9786050107371
dc.identifier.scopus2-s2.0-84963851506
dc.identifier.scopusqualityN/A
dc.identifier.startpage110
dc.identifier.urihttps://hdl.handle.net/11729/1108
dc.identifier.urihttp://dx.doi.org/10.1109/ELECO.2015.7394542
dc.identifier.wosWOS:000380410800022
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakConference Proceedings Citation Index – Science (CPCI-S)en_US
dc.institutionauthorKöprü, Ramazanen_US
dc.institutionauthorid0000-0002-6706-7352
dc.language.isoenen_US
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.publisherInstitute of Electrical and Electronics Engineers Incen_US
dc.relation.ispartof2015 9th International Conference on Electrical and Electronics Engineering (ELECO)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCMOS integrated circuitsen_US
dc.subjectElectric inductorsen_US
dc.subjectInductanceen_US
dc.subjectIntegrated circuit designen_US
dc.subjectNatural frequenciesen_US
dc.subjectQ factor measurementen_US
dc.subjectResonanceen_US
dc.subjectActive inductorsen_US
dc.subjectEquivalent inductanceen_US
dc.subjectQuality factorsen_US
dc.subjectRegulated cascadeen_US
dc.subjectSelf-resonance frequencyen_US
dc.subjectSpiral inductoren_US
dc.subjectSubmicron technologiesen_US
dc.subjectWide dynamic rangeen_US
dc.subjectPower inductorsen_US
dc.titleDesigning a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductoren_US
dc.typeConference Objecten_US
dspace.entity.typePublication

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