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Yayın A low loss, low voltage and high Q active inductor with multi-regulated cascade stage for RF applications(Institute of Electrical and Electronics Engineers Inc., 2015) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, RamazanNumerous structural planning of active inductors have been proposed as of not long ago in literature which showing tuning conceivable outcomes, low chip area and offering integration facility, they constitute promising architecture to replace passive inductors in RF circuits. The modified of a conventional active inductor based on Gyrator-C topology consisting of both transconductance stages realized by common-source configuration with multi-regulated cascade stage is presented. The Q factor and value of active inductor is adjusted with bias current and flexible capacitance, respectively. Multi regulated cascade stage is used to boost gain of input impedance and inductor value and decrease series resistance of designed inductor witch caused loss. The circuit is suitable for low voltage operation, high quality factor and low power dissipation. Simulation results are provided for 90 nm TSMC CMOS process with 1 V supply voltage. Self-resonance frequency and power consumption of active inductor is 8.9 GHz and 1.2 mW, respectively.Yayın CMOS high-performance UWB active inductor circuit(Institute of Electrical and Electronics Engineers Inc, 2016) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali NaderiIn order to maximize efficiency of the designed gyrator-based active inductor, advanced circuit techniques are used. Loss and noise are most important features of the AIs, where they should be low enough to have high-performance device. The gyrator-C topology is used to design a new low-loss and low-noise active inductor. The gyrator-C topology is potentially high-Q and all transistors are utilized in common-source configuration to have high impedance in input-output nodes. All transistors are free of body effect. The p-type differential pair input transistors and the feed forward path are employed to decrease noise of the proposed circuit. Additionally, inductance value and quality factor are adjusted by variation bias current which gives to the device tunable capability. HSPICE simulation results are presented to verify the performance of the circuit, where the 180 nm CMOS process and 1.8 V power supply are used. The noise voltage and power dissipation are less than 2.8 nV/ ? Hz and 1.3 mW, respectively.Yayın A new high performance CMOS active inductor(IEEE, 2016) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali NaderiA new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.Yayın Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters(Elsevier Science BV, 2017-06) Köprü, Ramazan; Momen, Hadi Ghasemzadeh; Yazgı, Metin; Saatlo, Ali NaderiThis work presents a new low-loss active inductor whose self-resonance frequency and quality factor parameters can be adjusted independently from each other. In order to achieve this property, a new input topology has been employed which consists of cascode structure with a diode connected transistor. Furthermore, the proposed input topology makes the device robust in terms of its performance over variation in process, voltage and temperature. Additionally, RC feedback is used to cancel series-loss resistance of the active inductor, which allows self-resonant enhancement as well. Schematic and post-layout simulation results show the theoretical validity of the design. To validate the design feasibility for process, voltage and temperature changes, Monte Carlo and temperature analysis are done. Suggested structure shows inductor behavior in the frequency range of 0.3–11.3 GHz. Maximum quality factor is obtained as high as 2.1k at 5.9 GHz. Total power consumption is as low as 1 mW with 1.8 V power supply.
