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2015 - 20163
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Yazar: Yazgı, Metin × Konu: Active inductors ×

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Listeleniyor 1 - 3 / 3
  • Küçük Resim
    Yayın
    CMOS high-performance UWB active inductor circuit
    (Institute of Electrical and Electronics Engineers Inc, 2016) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali Naderi
    In order to maximize efficiency of the designed gyrator-based active inductor, advanced circuit techniques are used. Loss and noise are most important features of the AIs, where they should be low enough to have high-performance device. The gyrator-C topology is used to design a new low-loss and low-noise active inductor. The gyrator-C topology is potentially high-Q and all transistors are utilized in common-source configuration to have high impedance in input-output nodes. All transistors are free of body effect. The p-type differential pair input transistors and the feed forward path are employed to decrease noise of the proposed circuit. Additionally, inductance value and quality factor are adjusted by variation bias current which gives to the device tunable capability. HSPICE simulation results are presented to verify the performance of the circuit, where the 180 nm CMOS process and 1.8 V power supply are used. The noise voltage and power dissipation are less than 2.8 nV/ ? Hz and 1.3 mW, respectively.
  • Küçük Resim
    Yayın
    Design of a new low loss fully CMOS tunable floating active inductor
    (Springer New York LLC, 2016-12) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali Naderi
    In this paper, a new tunable floating active inductor based on a modified tunable grounded active inductor is proposed. The multi regulated cascade stage is used in the proposed active structure to decrease the parasitic series resistance of active inductor, thus the Q factor enhancement is obtained. Furthermore, the arrangement of this stage leads to the smaller input transistor which determines active inductor’s self-resonance frequency and to be free of body effect which is crucial in sub-micron technology. Symmetrical design strategy has enabled both ports of the proposed floating active inductor to demonstrate the same properties. The Q factor and active inductor value are tuned with bias current and flexible capacitance (varactor), respectively. The self-resonance frequency of floating active inductor (~6.2 GHz) is almost the same as grounded prototype. In addition, the proposed active inductor also shows higher quality factor and inductance value compared to the conventional floating active inductor circuits. To show the performance of suggested circuit, simulations are done by using a 0.18 µm CMOS process, which demonstrates an adjustable quality factor of 10–567 with an inductance value range of 6–284 nH. Total DC power consumption and occupied area are 2 mW and 934.4 µm2, respectively.
  • Küçük Resim
    Yayın
    Designing a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductor
    (Institute of Electrical and Electronics Engineers Inc, 2015) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan
    A new Tunable Floating Active Inductor (TFAI) based on modified Tunable Grounded Active Inductor (TGAI) is proposed. Multi regulated cascade stage is used in TGAI to boost gain of input impedance and inductor value thus the Q factor enhancement obtained. The arrangement of Multi-Regulated Cascade (MRC) stage is caused the input transistor which determines AI self-resonance frequency to be as small as possible and it is free of body effect which is crucial in sub-micron technology. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This TFAI was designed using the AMS 0.18 um RF CMOS process, which demonstrates an adjustable quality factor of 10?567 with a 6?284 nH inductance. The Q factor and value of active inductor is adjusted with bias current and flexible capacitance (varactor), respectively. The self-resonance frequency for both grounded and floating AI is about 6.2 GHz. The proposed active inductor also shows wide dynamic range and higher quality factor compared to conventional floating active inductor circuits.