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Yayın CMOS high-performance UWB active inductor circuit(Institute of Electrical and Electronics Engineers Inc, 2016) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, Ramazan; Saatlo, Ali NaderiIn order to maximize efficiency of the designed gyrator-based active inductor, advanced circuit techniques are used. Loss and noise are most important features of the AIs, where they should be low enough to have high-performance device. The gyrator-C topology is used to design a new low-loss and low-noise active inductor. The gyrator-C topology is potentially high-Q and all transistors are utilized in common-source configuration to have high impedance in input-output nodes. All transistors are free of body effect. The p-type differential pair input transistors and the feed forward path are employed to decrease noise of the proposed circuit. Additionally, inductance value and quality factor are adjusted by variation bias current which gives to the device tunable capability. HSPICE simulation results are presented to verify the performance of the circuit, where the 180 nm CMOS process and 1.8 V power supply are used. The noise voltage and power dissipation are less than 2.8 nV/ ? Hz and 1.3 mW, respectively.Yayın Designing a new high Q fully CMOS tunable floating active inductor based on modified tunable grounded active inductor(Institute of Electrical and Electronics Engineers Inc, 2015) Momen, Hadi Ghasemzadeh; Yazgı, Metin; Köprü, RamazanA new Tunable Floating Active Inductor (TFAI) based on modified Tunable Grounded Active Inductor (TGAI) is proposed. Multi regulated cascade stage is used in TGAI to boost gain of input impedance and inductor value thus the Q factor enhancement obtained. The arrangement of Multi-Regulated Cascade (MRC) stage is caused the input transistor which determines AI self-resonance frequency to be as small as possible and it is free of body effect which is crucial in sub-micron technology. Compared to traditional CMOS spiral inductors, the active inductor proposed in this paper can substantially improve its equivalent inductance and quality factor. This TFAI was designed using the AMS 0.18 um RF CMOS process, which demonstrates an adjustable quality factor of 10?567 with a 6?284 nH inductance. The Q factor and value of active inductor is adjusted with bias current and flexible capacitance (varactor), respectively. The self-resonance frequency for both grounded and floating AI is about 6.2 GHz. The proposed active inductor also shows wide dynamic range and higher quality factor compared to conventional floating active inductor circuits.Yayın Circuit model for given reflectance data constructed with mixed lumped and distributed elements for high speed/high frequency communication systems(IEEE, 2005) Yarman, Bekir Sıddık Binboğa; Şengül, Metin; Kılınç, Ali; Aksen, AhmetIn this paper, a reflectance-based "non linear interpolation method" is presented to model the measured or computed data, obtained from a "passive one-port physical device" using mixed lumped and distributed elements. Mixed element model is constructed with cascade connection of series inductors [L], commensurate transmission lines or so called Unit Elements [UE] and shunt capacitors[C]. Basis of the new model rests on the numerical generation of the scattering parameters of the lossless two-port constructed with cascade connection of simple [L]-[UE]-[C] elements which describes a lossless 2-port in Darlington sense. The new modeling technique does not require direct optimization of the circuit elements of the selected topology. Rather, two-variable reflection coefficient is directly determined by means of a non linear but "convergence guaranteed" interpolation process to best fit the given data. A low-pass filter input reflection coefficient modeling example is included to exhibit the utilization of the proposed modeling method.
