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Yayın Thermally assisted OSL from deep traps in Al2O3:C(Pergamon-Elsevier Science Ltd, 2010-03) Polymeris, George S.; Raptis, Spyridoula; Afouxenidis, Dimitrios; Tsirliganis, Nestor C.; Kitis, GeorgeThe present work suggests an alternative experimental method in order to not only measure the signal of the deep traps in Al2O3:C without heating the sample to temperatures greater than 500 degrees C, but also use this signal for high dose level dosimetry purposes as well. This method consists of photo transfer OSL measurements performed at elevated temperatures using the blue LEDs (470 nm, FWHM 20 nm) housed at commercial Riso TL/OSL systems, after the sample was previously heated up to 500 degrees C in order to empty its main TL dosimetric trap. The influence of this procedure on specific features such as glow curve shape and sensitivity of the main TL glow peak was also studied.Yayın A model of AlN layer formation during ion nitriding of Al(Springer-Verlag, 2004-11) Dimitrov, Ventzislav IvanovA diffusion model of AlN layer formation by ion nitriding of Al is proposed based on the analysis of atomic transport during the process. This model is reduced to the following. Implantation of N ions to the surface of the specimen, named the reaction zone; extraction of Al from the substrate; diffusion transport of Al to the reaction zone through an AlN layer formed during the process; formation and growth of AlN in the reaction zone; sputtering of the AlN layer. Equations controlling the growth process have been obtained.
