Analysis and design of a resistor-less DC-bus active discharge and dynamic braking scheme using IGBTs in the active region

Yükleniyor...
Küçük Resim

Tarih

2026-04

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Institute of Electrical and Electronics Engineers Inc.

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Araştırma projeleri

Organizasyon Birimleri

Dergi sayısı

Özet

During shutdowns, emergency conditions, and dynamic braking, fully discharging the dc-bus capacitor or clamping the dc-bus voltage in industrial systems is typically managed using power resistors and additional switches. This conventional approach increases system cost, size, and complexity. This article introduces a compact, cost-effective, resistor-less method for two functions: 1) active discharge and 2) dynamic braking in low-power industrial systems. The proposed technique operates IGBTs in their active region with low gate-emitter voltages ($V_{\text {GE}}$ ), creating high impedance in the discharge path to limit current. For active discharge, a constant-power strategy is implemented using pulse frequency modulation (PFM), where the on-time (t_{\text {on}}$ ) of each pulse is fixed and the pulse frequency is ramped up to accelerate energy dissipation. This approach enables complete discharge of a 600-V dc-bus within 1 s, handled entirely by a single IGBT. The method is validated across three different IGBT vendors, showing consistent results and long-term reliability with no parameter degradation after over 200000 completed discharge cycles. For dynamic braking, the PFM method with fixed pulse frequency enables continuous power dissipation between 50 and 150 W for over 30 min. It effectively replaces conventional internal braking resistors typically rated from 20 to 200 W with resistance values of 5-$120~\Omega $. The system can also tolerate brief overloads up to 50% beyond IGBT current ratings for 10-20 s, providing sufficient time to complete braking without failure, as confirmed by test results. All these benefits are achieved through a simple gate driver modification that supplies partial $V_{\text {GE}}$ levels (3-10 V), eliminating bulky resistors, reducing cost by at least 50%, and saving space-making the solution ideal for high-volume industrial applications.

Açıklama

The authors would like to thank the Semiconductor Research Corporation (SRC) and Texas Instruments (TI) for their support of this research and for providing the programmable gate driver prototype used in this work.

Anahtar Kelimeler

Active discharge, Active region, Dc-bus capacitor, Dynamic braking, IGBT, Industrial drives, Si IGBT, Braking, Buses, Cost effectiveness, Dynamics, Electric losses, Pulse time modulation, Resistors, Bus capacitors, Emergency conditions, Industrial systems, Pulse frequencies, Insulated gate bipolar transistors (IGBT)

Kaynak

IEEE Journal of Emerging and Selected Topics in Power Electronics

WoS Q Değeri

Q1

Scopus Q Değeri

Q1

Cilt

14

Sayı

2

Künye

Sezer, M. M., Deshmukh, A. V., Hava, A. M. & Akın, B. (2026). Analysis and design of a resistor-less DC-bus active discharge and dynamic braking scheme using IGBTs in the active region. IEEE Journal of Emerging and Selected Topics in Power Electronics, 14(2), 2035-2048. doi:https://doi.org/10.1109/JESTPE.2025.3614133