Analysis and design of a resistor-less DC-bus active discharge and dynamic braking scheme using IGBTs in the active region

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dc.authorid0009-0001-9956-2112
dc.authorid0009-0005-6006-8378
dc.authorid0000-0001-6393-8299
dc.authorid0000-0001-6912-7219
dc.contributor.authorSezer, Mustafa Muraten_US
dc.contributor.authorDeshmukh, Akshay Vijayraoen_US
dc.contributor.authorHava, Ahmet Masumen_US
dc.contributor.authorAkın, Bilalen_US
dc.date.accessioned2026-04-21T06:15:55Z
dc.date.available2026-04-21T06:15:55Z
dc.date.issued2026-04
dc.departmentIşık Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümüen_US
dc.departmentIşık University, Faculty of Engineering and Natural Sciences, Department of Electrical and Electronics Engineeringen_US
dc.descriptionThe authors would like to thank the Semiconductor Research Corporation (SRC) and Texas Instruments (TI) for their support of this research and for providing the programmable gate driver prototype used in this work.en_US
dc.description.abstractDuring shutdowns, emergency conditions, and dynamic braking, fully discharging the dc-bus capacitor or clamping the dc-bus voltage in industrial systems is typically managed using power resistors and additional switches. This conventional approach increases system cost, size, and complexity. This article introduces a compact, cost-effective, resistor-less method for two functions: 1) active discharge and 2) dynamic braking in low-power industrial systems. The proposed technique operates IGBTs in their active region with low gate-emitter voltages ($V_{\text {GE}}$ ), creating high impedance in the discharge path to limit current. For active discharge, a constant-power strategy is implemented using pulse frequency modulation (PFM), where the on-time (t_{\text {on}}$ ) of each pulse is fixed and the pulse frequency is ramped up to accelerate energy dissipation. This approach enables complete discharge of a 600-V dc-bus within 1 s, handled entirely by a single IGBT. The method is validated across three different IGBT vendors, showing consistent results and long-term reliability with no parameter degradation after over 200000 completed discharge cycles. For dynamic braking, the PFM method with fixed pulse frequency enables continuous power dissipation between 50 and 150 W for over 30 min. It effectively replaces conventional internal braking resistors typically rated from 20 to 200 W with resistance values of 5-$120~\Omega $. The system can also tolerate brief overloads up to 50% beyond IGBT current ratings for 10-20 s, providing sufficient time to complete braking without failure, as confirmed by test results. All these benefits are achieved through a simple gate driver modification that supplies partial $V_{\text {GE}}$ levels (3-10 V), eliminating bulky resistors, reducing cost by at least 50%, and saving space-making the solution ideal for high-volume industrial applications.en_US
dc.description.sponsorshipSemiconductor Research Corporationen_US
dc.description.versionPublisher's Versionen_US
dc.identifier.citationSezer, M. M., Deshmukh, A. V., Hava, A. M. & Akın, B. (2026). Analysis and design of a resistor-less DC-bus active discharge and dynamic braking scheme using IGBTs in the active region. IEEE Journal of Emerging and Selected Topics in Power Electronics, 14(2), 2035-2048. doi:https://doi.org/10.1109/JESTPE.2025.3614133en_US
dc.identifier.doi10.1109/JESTPE.2025.3614133
dc.identifier.endpage2048
dc.identifier.issn2168-6777
dc.identifier.issn2168-6785
dc.identifier.issue2
dc.identifier.scopus2-s2.0-105017459475
dc.identifier.scopusqualityQ1
dc.identifier.startpage2035
dc.identifier.urihttps://hdl.handle.net/11729/7325
dc.identifier.urihttps://doi.org/10.1109/JESTPE.2025.3614133
dc.identifier.volume14
dc.identifier.wosWOS:001732677400032
dc.identifier.wosqualityQ1
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScience Citation Index Expanded (SCI-EXPANDED)en_US
dc.institutionauthorHava, Ahmet Masumen_US
dc.institutionauthorid0000-0001-6393-8299
dc.language.isoenen_US
dc.peerreviewedYesen_US
dc.publicationstatusPublisheden_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofIEEE Journal of Emerging and Selected Topics in Power Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectActive dischargeen_US
dc.subjectActive regionen_US
dc.subjectDc-bus capacitoren_US
dc.subjectDynamic brakingen_US
dc.subjectIGBTen_US
dc.subjectIndustrial drivesen_US
dc.subjectSi IGBTen_US
dc.subjectBrakingen_US
dc.subjectBusesen_US
dc.subjectCost effectivenessen_US
dc.subjectDynamicsen_US
dc.subjectElectric lossesen_US
dc.subjectPulse time modulationen_US
dc.subjectResistorsen_US
dc.subjectBus capacitorsen_US
dc.subjectEmergency conditionsen_US
dc.subjectIndustrial systemsen_US
dc.subjectPulse frequenciesen_US
dc.subjectInsulated gate bipolar transistors (IGBT)en_US
dc.titleAnalysis and design of a resistor-less DC-bus active discharge and dynamic braking scheme using IGBTs in the active regionen_US
dc.typeArticleen_US
dspace.entity.typePublicationen_US

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